Silicon Carbide Neutron Detectors for Harsh Nuclear Environments: A Review of the State of the Art

Silicon carbide (SiC) semiconductor is an ideal material for solid-state nuclear radiation detectors to be used in high-temperature, high-radiation environments. Such harsh environments are typically encountered reactor measurement locations as well high-level radioactive waste and/or “hot” dismantling–decommissioning operations. In the present fleet of commercial reactors, temperatures excess 300 °C often encountered, and up 800 anticipated advanced designs. The wide bandgap SiC (3.27 eV) compared more widely semiconductors such silicon (1.12 eV at room temperature) has allowed low-noise measurements carried out 700 °C. concentration thermally induced charge carriers about four orders magnitude less than that temperature. Furthermore, have been demonstrated much resistant effects radiation-induced damage conventional semiconductors, silicon, germanium, or cadmium zinc telluride (CZT), operational after extremely high gamma-ray, neutron, charged-particle doses. purpose review provide updated state art neutron explore their applications applications. Conclusions related current state-of-the-art will presented, specific discussed.